High-pressure Annealing Equipment (HPA)

■Feature

This equipment is designed to generate silicon oxide layer on the polysilicon that is used for low-temperature polysilicon TFT LCD.
Oxygen and silicon are united through pressurization with steam at a low temperature below the melting point of glass.
Influence of the metal ion is eliminated due to adoption of quartz glass.

High-pressure Annealing Equipment (HPA)

■Specification

Type Effective diameter Effective height Quartz chamber Outside chamber Temperature Pressure
φmm mm Inner diameter φmm Inner diameter φmm ℃ MPa(G)
VPA-360 340 250 360 760 Room
temperature
～800
degrees C		 Atmospheric pressure – 3
VPA-550 530 300 550 950
VPA-700 670 400 700 1100
VPA-1000 980 600 1000 1400
VPA-1200 1180 800 1200 1600
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