High-pressure Annealing Equipment (HPA)

Feature

This equipment is designed to generate silicon oxide layer on the polysilicon that is used for low-temperature polysilicon TFT LCD.
Oxygen and silicon are united through pressurization with steam at a low temperature below the melting point of glass.
Influence of the metal ion is eliminated due to adoption of quartz glass.

Specification

Type Effective diameter Effective height Quartz chamber Outside chamber Temperature Pressure
φmm mm Inner diameter φmm Inner diameter φmm degrees C MPa(G)
VPA-360 340 250 360 760 Room temperature  –  800 Atmospheric pressure  –  3
VPA-550 530 300 550 950
VPA-700 670 400 700 1100
VPA-1000 980 600 1000 1400
VPA-1200 1180 800 1200 1600


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